- Part Number TK42A12N1,S4X
- Manufacturer Toshiba Semiconductor and Storage
- Description MOSFET N-CH 120V 42A TO-220
-
Lead Free / RoHS
Part Number
TK42A12N1,S4X
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 120V 42A TO-220
Lead Free / RoHS
Stock & Pricing
Request Quotation
Specification
| Drain to Source Voltage (Vdss): | 120V |
|---|---|
| Power Dissipation (Max): | 35W (Tc) |
| Package / Case: | TO-220-3 Full Pack |
| Mounting Type: | Through Hole |
| Packaging: | Tube |
| Supplier Device Package: | TO-220SIS |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N-Channel |
| Series: | U-MOSVIII-H |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Other Names: | TK42A12N1,S4X(S TK42A12N1,S4X-ND TK42A12N1S4X |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 60V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 21A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Operating Temperature: | 150°C (TJ) |