- Part Number BSC046N10NS3GATMA1
- Manufacturer Infineon Technologies
- Description MOSFET N-CH 100V 100A TDSON-8
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Lead Free / RoHS
Part Number
BSC046N10NS3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 100A TDSON-8
Lead Free / RoHS
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Specification
| Drain to Source Voltage (Vdss): | 100V |
|---|---|
| Power Dissipation (Max): | 156W (Tc) |
| Package / Case: | 8-PowerTDFN |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | PG-TDSON-8 |
| Vgs(th) (Max) @ Id: | 3.5V @ 120µA |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 100V 17A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| FET Type: | N-Channel |
| Series: | OptiMOS™ |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 100A (Tc) |
| Other Names: | BSC046N10NS3GATMA1CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 50V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 50A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |